High Performance EEPROMs Using N- and P-Channel Polysilicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Oxide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | N.I.Lee | ko |
| dc.contributor.author | J.W. Lee | ko |
| dc.contributor.author | C.H.Han | ko |
| dc.date.accessioned | 2013-02-28T04:37:23Z | - |
| dc.date.available | 2013-02-28T04:37:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999-01 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.20, no.1, pp.15 - 17 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/72809 | - |
| dc.description.abstract | High-performance EEPROM's using n- and p-channel polysilicon thin-film transistors (poly-Si TFT's) with electron cyclotron resonance (ECR) NaO-plasma oxide have been demonstrated. Both programming and erasing were accomplished by Fowler-Nordheim (F-N) tunneling within 1 ms regardless of programming and erasing voltages. The poly-Si TFT EEPROM's have a threshold voltage shift of 4 V between programmed and erased states; furthermore, maintain a large threshold voltage shift of 2.5 V after 1 x 10(5) program and erase cycles. This is attributed to the excellent charge-to-breakdown (Qbd) up to 10 C/cm(2) of ECR N2O-plasma oxide. | - |
| dc.language | English | - |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
| dc.subject | PLASMA | - |
| dc.title | High Performance EEPROMs Using N- and P-Channel Polysilicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Oxide | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000077934100005 | - |
| dc.identifier.scopusid | 2-s2.0-0002796231 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 20 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 15 | - |
| dc.citation.endingpage | 17 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.contributor.localauthor | C.H.Han | - |
| dc.contributor.nonIdAuthor | N.I.Lee | - |
| dc.contributor.nonIdAuthor | J.W. Lee | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | EEPROM | - |
| dc.subject.keywordAuthor | ECR N2O-plasma oxide | - |
| dc.subject.keywordAuthor | endurance | - |
| dc.subject.keywordAuthor | poly-Si TFT | - |
| dc.subject.keywordAuthor | Qbd | - |
| dc.subject.keywordPlus | PLASMA | - |
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