Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor

Cited 94 time in webofscience Cited 99 time in scopus
  • Hit : 431
  • Download : 698
A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated. The device shows staircases and oscillations in the drain current at room temperature. These data are interpreted as due to single electron tunneling through the dots located in the shortest current path between the source and the drain electrodes. The dot size calculated from the data is similar to 7 nm, which is consistent with the size of the self-assembled dots incorporated in the transistor. (C) 1998 American Institute of Physics. [S0003-6951(98)02147-0].
Publisher
Amer Inst Physics
Issue Date
1998-11
Language
English
Article Type
Article
Keywords

SINGLE-ELECTRON TRANSISTOR; MEMORY

Citation

APPLIED PHYSICS LETTERS, v.73, no.21, pp.3129 - 3131

ISSN
0003-6951
DOI
10.1063/1.122695
URI
http://hdl.handle.net/10203/71573
Appears in Collection
RIMS Journal Papers
Files in This Item
000077063800036.pdf(577.45 kB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 94 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0