Ultra thin polyoxide grown by ECR(Electron Cyclotron Resonance) N2O Plasma

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A process has been developed for growing ultrathin oxide on a poly-silicon layer at low temperature by using electron cyclotron resonance (ECR) N2O plasma. Sub-4nm thick polyoxides on n(+) and p(+) polysilicon layers were grown and characterised. The oxides have large breakdown voltage and small, charge trapping. QBD values of up to 7C/cm(2) for polyoxide on p(+) polysilicon and up to 5C/cm(2) for polyoxide on n(+) polysilicon were obtained.
Publisher
Inst Engineering Technology-Iet
Issue Date
2000-02
Language
English
Article Type
Article
Keywords

POLYSILICON

Citation

ELECTRONICS LETTERS, v.36, no.4, pp.361 - 362

ISSN
0013-5194
URI
http://hdl.handle.net/10203/70824
Appears in Collection
RIMS Journal Papers
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