DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, S.Y. | ko |
dc.contributor.author | Lee, J.H. | ko |
dc.contributor.author | Hyung-Cheol Shin | ko |
dc.date.accessioned | 2013-02-27T21:02:46Z | - |
dc.date.available | 2013-02-27T21:02:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-02 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.36, no.4, pp.361 - 362 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70824 | - |
dc.description.abstract | A process has been developed for growing ultrathin oxide on a poly-silicon layer at low temperature by using electron cyclotron resonance (ECR) N2O plasma. Sub-4nm thick polyoxides on n(+) and p(+) polysilicon layers were grown and characterised. The oxides have large breakdown voltage and small, charge trapping. QBD values of up to 7C/cm(2) for polyoxide on p(+) polysilicon and up to 5C/cm(2) for polyoxide on n(+) polysilicon were obtained. | - |
dc.language | English | - |
dc.publisher | Inst Engineering Technology-Iet | - |
dc.subject | POLYSILICON | - |
dc.title | Ultra thin polyoxide grown by ECR(Electron Cyclotron Resonance) N2O Plasma | - |
dc.type | Article | - |
dc.identifier.wosid | 000085671500052 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 361 | - |
dc.citation.endingpage | 362 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.contributor.localauthor | Hyung-Cheol Shin | - |
dc.contributor.nonIdAuthor | Han, S.Y. | - |
dc.contributor.nonIdAuthor | Lee, J.H. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | POLYSILICON | - |
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