Electron Cyclotron Resonance N2O-플라즈마 게이트 산화막을 사용한 다결정 실리콘 박막 트랜지스터의 성능 향상 및 단채널 효과 억제Improved Performance and Suppressed Short-Channel Effects Polycrytalline Silicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Gate Oxide
- Publisher
- 대한전자공학회
- Issue Date
- 1998-12
- Language
- Korean
- Citation
전자공학회논문지
- ISSN
- 1016-135X
- Appears in Collection
- RIMS Journal Papers
- Files in This Item
- There are no files associated with this item.
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