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Showing results 1 to 7 of 7

1
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part I: Charge Model

Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.840 - 847, 2013-02

2
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current Model

Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.848 - 855, 2013-02

3
An investigation of nonuniform deposition of field emission displays phosphors on unbiased indium-tin-oxide coated glass during electrophoresis

Shin, SH; Jeon, DukYoung; Jin, YW; Kim, JM, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.12A, pp.6743 - 6746, 2000-12

4
Analytical Threshold Voltage Model of Junctionless Double-Gate MOSFETs With Localized Charges

Woo, Jong-Ho; Choi, Ji-Min; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.9, pp.2951 - 2955, 2013-09

5
Effect of mesocelluar carbon foam electrode material on performance of vanadium redox flow battery

Jeong, Sanghyun; An, Sunhyung; Jeong, Jooyoung; Lee, Jinwoo; Kwon, Yongchai, JOURNAL OF POWER SOURCES, v.278, pp.245 - 254, 2015-03

6
Universal potential model in tied and separated double-gate MOSFETs with consideration of symmetric and asymmetric structure

Han, Jin-Woo; Kim, Chung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.6, pp.1472 - 1479, 2008-06

7
Validity of the equations for the contact angle on real surfaces

Seo, Kwangseok; Kim, Minyoung; Kim, DoHyun, KOREA-AUSTRALIA RHEOLOGY JOURNAL, v.25, no.3, pp.175 - 180, 2013-08

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