Browse "College of Engineering(공과대학)" by Subject oxide semiconductor
Showing results 1 to 15 of 15
An 'aqueous route' for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates Hwang, Young-Hwan; Seo, Jin-Suk; Yun, Je-Moon; Park, Hyung-Jin; Yang, Seung-Cheol; Park, Sang-Hee Ko; Bae, Byeong-Soo, NPG ASIA MATERIALS, v.5, 2013-04 |
| Characterization of low voltage operating $InGaZnO_4$ based thin film transistor with high-k insulator = 고유전 절연막을 이용한 $InGaZnO_4$ 기반의 박막 트랜지스터의 저전압 구동 특성 연구link Kim, Dong-Hun; 김동훈; et al, 한국과학기술원, 2009 |
| Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn In-O Thin-Film Transistors Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.11, pp.9271 - 9279, 2017-03 |
| Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 |
| Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In-Ga-Zn-O Thin-Film Transistors Bak, Jun Yong; Yang, Sinhyuk; Ryu, Min Ki; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, ACS APPLIED MATERIALS & INTERFACES, v.4, no.10, pp.5369 - 5374, 2012-10 |
| Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; Park, Wan Woo; Park, Sang-Hee Ko; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.42, pp.36962 - 36970, 2017-10 |
| Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu,Min-Ki; Park, Sang-Hee Ko; Hwang,Chi-Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.7, pp.2404 - 2411, 2014-07 |
| Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs Cho, Seong-In; Woo, Namgyu; Jeong, Hyun-Jun; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.650 - 653, 2023-04 |
| Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In-Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures Bak, Jun Yong; Yang, Shinhyuk; Ryu, Ho-Jun; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.79 - 86, 2014-01 |
| Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell Yoon, Sung-Min; Byun, Chun-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Cho, Doo-Hee; Jung, Soon-Won; Kang, Seung-Youl; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.2, pp.138 - 140, 2010-02 |
| Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu, Min-Ki; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.357 - 359, 2014-03 |
| Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon, Sung-Min; Yang, Shinhyuk; Ryu, Min-Ki; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.7, pp.2135 - 2142, 2011-07 |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 |
| Trench-Structured High-Current-Driving Aluminum-Doped Indium-Tin-Zinc Oxide Semiconductor Thin-Film Transistor Kim, Do Hyung; Lee, Kwang-Heum; Lee, Seung Hee; Kim, Junsung; Yang, Junghoon; Kim, Jingyu; Cho, Seong-In; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.10, pp.1677 - 1680, 2022-10 |
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