Browse "College of Engineering(공과대학)" by Author Moon, Jung Min
Showing results 1 to 11 of 11
| $4F^2$ 디램 셀을 위한 수직 게이트 트랜지스터의 플로팅 바디 효과 및 메모리 동작에 미치는 영향 연구 = (A) study on floating body effects and memory operation of vertical gate transistor for $4F^2$ DRAM celllink 문정민; 이석희; et al, 한국과학기술원, 2013 |
| Analysis of Fluorine Effects on Charge-Trap Flash Memory of W/TiN/Al2O3/Si3N4/SiO2/Poly-Si Gate Stack Lee, Tae Yoon; Lee, Seung Hwan; Son, Jun Woo; Lee, Sang Jae; Bong, Jae Hoon; Shin, Eui Joong; Kim, Sung Ho; et al, SOLID-STATE ELECTRONICS, v.164, pp.107713, 2020-02 |
| First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation Kim, Tae Kyun; Kim, Dong Hyun; Yoon, Young Gwang; Moon, Jung Min; Hwang, Byeong Woon; Moon, Dong-Il; Lee, Gi Seong; et al, IEEE ELECTRON DEVICE LETTERS, v.34, no.12, pp.1479 - 1481, 2013-12 |
| Fluorine Effects Originating from the CVD W Process on Charge-Trap Flash Memory Cells Moon, Jung Min; Lee, Tae Yoon; Ahn, Hyunjun; Lee, Tae In; Hwang, Wan Sik; Cho, Byung-Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp.378 - 382, 2019-01 |
| Ge 기반의 소자에서 Y-ZrO2 게이트 유전체를 이용한 EOT 스케일링(~5.7 A) 및 누설 전류와 계면 트랩의 감소 Lee, Tae In; Kim, Min Ju; Manh-Cuong Nguyen; Ahn, Hyunjun; Moon, Jung Min; Lee, Tae Yoon; Yu, Hyun-Young; et al, 제25회 한국반도체학술대회, 서강대학교, 2018-02-07 |
| Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate Jeong, Woo-Jin; Kim, Tae Kyun; Moon, Jung Min; Park, Min Gyu; Yoon, Young Gwang; Hwang, Byeong Woon; Choi, Woo Young; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.3, 2015-03 |
| Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04 |
| Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-kappa Gate Spacers Choi, Ji Hun; Kim, Tae Kyun; Moon, Jung Min; Yoon, Young Gwang; Hwang, Byeong Woon; Kim, Dong Hyun; Lee, Seok-Hee, IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1182 - 1184, 2014-12 |
| Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition Kim, Choong-Ki; Ahn, Hyun Jun; Moon, Jung Min; Lee, Sukwon; Moon, Dong-Ii; Park, Jeong Soo; Cho, Byung-Jin; et al, SOLID-STATE ELECTRONICS, v.114, pp.90 - 93, 2015-12 |
| The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition Moon, Jung Min; Ahn, Hyun Jun; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Rho, Il Cheol; Kim, Choon Hwan; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.4, pp.1423 - 1427, 2016-04 |
| Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate Jeong, Woo-Jin; Kim, Tae Kyun; Moon, Jung Min; Shin, Min-Cheol; Lee, Seok-Hee, ISPSA-2014, ISPSA-2014, 2014-12-08 |
Discover
Open Access
Date issued
- 23,822 2020 - 2024
- 75,416 2010 - 2019
- 57,253 2000 - 2009
- 30,842 1990 - 1999
- 9,025 1980 - 1989