Showing results 1 to 60 of 194
A 1.12mW continuous healthcare monitor chip integrated on a planar fashionable circuit board Kim, H.; Kim, Y.; Kwon, Young Se; Yoo, Hoi-Jun, 2008 IEEE International Solid State Circuits Conference, ISSCC, pp.150 - 151, 2008-02-03 |
A 3-D X-Band T/R Module Package With an Anodized Aluminum Multilayer Substrate for Phased Array Radar Applications Yeo, Sung-Ku; Chun, Jong-Hoon; Kwon, Young Se, IEEE TRANSACTIONS ON ADVANCED PACKAGING, v.33, no.4, pp.883 - 891, 2010-11 |
A compact high power T/R module for X-band phased array radar applications using an anodized aluminum substrate Yeo S.-K.; Kim C.H.; Ahn J.-H.; Chun J.-H.; Kwon, Young Se, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009, pp.1365 - 1368, 2009-09-28 |
A Compact Long Cavity Laser Diode with a Single Longitudinal Mode Kwon, Young Se, OECC `97, 1997 |
A frequency agile floating-patch MEMS antenna for 42 GHz applications Cho Y.H.; Kahng S.-T.; Choi W.; Ha M.-L.; Pyo C.; Kwon, Young Se, 2005 IEEE Antennas and Propagation Society International Symposium and USNC/URSI Meeting, pp.512 - 515, 2005-07-03 |
A GAAS FLOATED ELECTRON CHANNEL FIELD-EFFECT TRANSISTOR (FECFET) FABRICATED BY SELECTIVE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION KIM, CT; HONG, CH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.30, no.12B, pp.3828 - 3832, 1991-12 |
A GAAS JUNCTION-GATE FECFET (J-FECFET) FOR THE DIGITAL INTEGRATED-CIRCUITS KIM, CT; LEE, YJ; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.32, no.1B, pp.556 - 559, 1993-01 |
A GaAs Junction-Gate FECFET for the Digital Integrated Circuits Kwon, Young Se, International Conference on Solid State Device and Materials, 1992 |
A GaAs MESFET with very short channel length Fabricated by Selective MOCVD Kwon, Young Se, International Conference on Solid State Device and Materials, 1991 |
A monolithically integrated InP-based HBT and p-i-n photodiode using new stack-shared layer scheme Kwon, Young Se, EUMC 2003, 2003 |
A Multichip on Oxide of 1.25 Gbps 80 dBohm Fully Differential CMOS Transimpedance Amplifier for Optical Interconnect Applications Kwon, Young Se, ISSCC 2002, pp.80 - 81, 2002 |
A New GaAs BiFET Structure Using Selective MOCVD Technique Kwon, Young Se, International Symposium on Compound Semiconductors, 1995 |
A New GaAs FET with Deln-Delp dipole Barrier(DIB) Kwon, Young Se; Hong, Songcheol; Cho, HR, International Conference on Solid State Device and Materials, 1993 |
A New High Radiance LED Structure with Circular 45 degree Corner Reflector Kwon, Young Se, ICSSDM, 2000 |
A Novel Area-Variable Varactor Diode Kwon, Young Se, International Symposium on Compound Semiconductors, pp.733 - 736, 1994 |
A Novel Fabrication Technology for Integrating FET'sand High Performance Diodes, and Its Application to MMIC VCO. Kwon, Young Se, IEDM '96, 1996 |
A Vertical Integration of GaAs/AlGaAs LED and Vertical FET with Embedded Schottky Electrodes C.H.Hong; C.T.Kim; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.29, no.12, 1990 |
A Vertical Integration of Laser Diode and Transistor Kwon, Young Se, IEEE Region 10 conference, 1987 |
A Waveguide on the Oxidized Porous Silicon for the Robust Alignment in the Silicon Optical Bench Kwon, Young Se, First International Sysposium on Integrated Optoelectronics(Electro-Chemical Society Meeting), Electro-Chemical Society, 2002-05 |
Air-Cavity Transmission Lines on Anodized Aluminum for High-Performance RF Modules Yook, Jong-Min; Kim, Kyoung-Min; Kwon, Young Se, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.10, pp.623 - 625, 2009-10 |
AlGaAs/GaAs HBT Fabricated using Selective MOCVD Kwon, Young Se; Hong, Songcheol; Son, JH; Kim, CT, International Conference on Solid State Device and Materials, pp.610 - 612, 1994 |
AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern Cho Gyu-Seog; Kwon, Young Se, Optoelectronic Component Technologies, v.1813, pp.142 - 153, 1992-12-16 |
Aluminium-based packaging platform for LED using selectively anodising method Kim, Kyoung Min; Shin, S. H.; Lee, Y. K.; Choi, Sangmin; Kwon, Young Se, ELECTRONICS LETTERS, v.44, no.1, pp.24 - 25, 2008-01 |
Aluminum packaging for light-emitting diode using selectively anodizing method Kim, Kyoung-Min; Lee, Young Ki; Shin, Sang-Hyun; Choi, Seog Moon; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.4, pp.2950 - 2953, 2008-04 |
Aluminum-based packaging platform for LED using selectively anodising method k. m. kim; s. h. shin; y. k. lee; s. m. choi; Kwon, Young Se, ELECTRONICS LETTERS, v.44, no.1, 2001 |
An In GaAs/InP P-i-n JFET OEIG with a Wing Shaped P-InP Layer K.S.Park; Y.S.Kim; K.R.Oh; J.S.Kim; Y.T.Lee; S.J.Kim; Kwon, Young Se, IEEE PHOTONICS TECHNOLOGY LETTERS, v.4, no.4, 1992 |
An InGaAsP/InP Twin-Guide Laser Diode with Rectangular Ring Cavity soo-kun jeon; bun-joong kim; moon-jung kim; jung-ho cha; jae-ho kim; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.41, no.4B, pp.2556 - 2558, 2002-04 |
An oxidized porous silicon (OPS) microlens implemented on thick OPS membrane for a silicon-based optoelectronic-multichip module (OE-MCM) Ha, ML; Kim, JH; Yeo, SK; Kwon, Young Se, IEEE PHOTONICS TECHNOLOGY LETTERS, v.16, no.6, pp.1519 - 1521, 2004-06 |
An X-band high power amplifier module package using selectively anodized aluminum substrate Yeo S.-K.; Chun J.-H.; Kim K.-M.; Yook J.-M.; Kwon, Young Se, European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, pp.559 - 562, 2007-10-08 |
An X-band high power amplifier module package using selectively anodized aluminum substrate Yeo S.-K.; Chun J.-H.; Kim K.-M.; Yook J.-M.; Kwon, Young Se, 37th European Microwave Conference, EUMC, pp.1357 - 1360, 2007-10-09 |
Analysis of Coupling Coefficient Between Tow Vertical Cavity Surface Emitting Lasers for Two-Dimensional Phase-Locked Array Yoo, Hoi-Jun; J.R.Hayes; Kwon, Young Se, ELECTRONICS LETTERS, v.26, 1990-06 |
Array Mode Analysis of Two-Dimensional Phased Arrays of Vertical Cavity Surface Emitting Lasers H.J.Yoo; J.R.Hayes; E.G.Paek; A.Scherer; Kwon, Young Se, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.26, no.6, pp.1039, 1990 |
Attenuation Characteristics of Coplanar Waveguides on Oxidized Porous Silicon Varying with its Oxidation Temperature man-lyun ha; sung-ku yeo; Kwon, Young Se, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.5, pp.1272 - 1274, 2004-11 |
Balanced BPFs implemented using IPD (integrated passive devices) technology Yook J.-M.; Yu J.-I.; Park J.-C.; Kwon, Young Se, 13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010, pp.429 - 432, 2010-09-28 |
Bell-Shaped Light Emitting Diode Structure with 45 degree Corner Reflector, Deep Side Wall and Microlens Kwon, Young Se, SPIE, 2002 |
Characteristics of AlGaN/GaN HEMT Devices with SiN Passivation Kwon, Young Se, IEDM, 2000 |
Chemical Etching of InGaAsP/InP Using HBr-H3PO4-Cr2O7 and Its Applicationto Microlens array Kwon, Young Se, International Conference on Indium Phosphide and Related Materials, 2000 |
Chip scale package for SAW filter on the oxidized porous silicon using flip-chip bonding and Cu plated metal wall Ha M.-L.; Lee J.-S.; Kwon, Young Se, 52nd Electronic Components and Technology Conference, pp.372 - 377, Electronic Components and Technology Conference, 2002-05-28 |
Compact front end modules for WLAN applications with integrated passive devices using selectively anodized aluminum substrate Yu J.-I.; Yook J.-M.; Park J.-C.; Kim C.-H.; Kwon, Young Se, 13th European Microwave Week 2010: Connecting the World, EuMIC 2010, pp.329 - 332, 123, 2010-09-26 |
CONICAL MICROLENS ARRAYS THAT FLATTEN OPTICAL-IRRADIANCE PROFILES OF NONUNIFORM SOURCES JI, JK; Kwon, Young Se, APPLIED OPTICS, v.34, no.16, pp.2841 - 2843, 1995-06 |
Crystallographically defined emitter contact technology for self-alignment process in InP/InGaAs HBTs Kim, M; Jeon, SK; Kwon, Young Se, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.8, pp.J29 - J31, 2004 |
Dependence of supermode discrimination and radiation angles on channel widths and spacings in laser arrays Kwon, Kee Young; Kwon, Young Se, APPLIED OPTICS, v.26, no.5, pp.764 - 766, 1987-03 |
Design and optical characterization of passive pixel with sensitivity-improved InGaAs/InP phototransistors considering light-dependent shunt resistance for near infrared imaging applications Jo, Young Chang; Song, Hong Joo; Choi, Yeon Shik; Kim, Hoon; Park, Hyo Derk; Kwon, Young Se; Choi, Pyong, JAPANESE JOURNAL OF APPLIED PHYSICS, v.46, no.9B, pp.6222 - 6226, 2007-09 |
DIFFUSION OF ZINC INTO GAAS THROUGH AL0.3GA0.7AS Yoo, Hoi-Jun; Kwon, Young Se, JOURNAL OF ELECTRONIC MATERIALS, v.17, no.4, pp.337 - 339, 1988-07 |
Effects of Buffer Structures of InGaAs MESFETs. Kwon, Young Se; Hong, Songcheol; Lee, JJ; Kim, DW; Lee, HG; Pyun, KE; Kwon, YS, International Symposium on Compound Semiconductors, 1995 |
Embedded IC technology for compact packaging inside aluminum substrate (pocket embedded Packaging) Kim K.-M.; Yook J.-M.; Yeo S.-K.; Kwon, Young Se, European Microwave Week 2007, EuMW 2007 - 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, pp.327 - 330, 123, 2007-10-08 |
Emitter size effects on DC current gain and RF performance in InP/InGaAs HBT's Shin, H; Leier, H; Kwon, Young Se, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S1051 - S1054, 1999-12 |
Etched profiles of SiO2 Layer Oh, Se-Ho; Choi, Yearn-Ik; Kwon, Young Se; Kim, Choong Ki, ELECTRONICS LETTERS, v.17, 1981-03 |
Fabrication and analysis of high-Q inductor on anodized aluminum for high power package Lee J.-H.; Shin S.-H.; Kim K.M.; Kwon, Young Se, 36th European Microwave Conference, EuMC 2006, pp.1387 - 1390, 2006-09-10 |
Fabrication and characterization of two-dimensional phased arrays of vertical cavity surface emitting lasers Yoo, Hoi-Jun; Kwon, Young Se; Hayes, J.R.; Andreadakis, N.; Paek, E.G.; Chang, G.K.; Harbinson, J.P.; et al, IEEE/LEOS Annual Meeting, 1990 |
FABRICATION OF A 2-DIMENSIONAL PHASED-ARRAY OF VERTICAL-CAVITY SURFACE-EMITTING LASERS Yoo, Hoi-Jun; SCHERER, A; HARBISON, JP; FLOREZ, LT; PAEK, EG; VANDERGAAG, BP; HAYES, JR; et al, APPLIED PHYSICS LETTERS, v.56, no.13, pp.1198 - 1200, 1990-03 |
Fabrication of InGaAs-AlGaAs-GaAs integrated twin-guide corner reflector lasers using in situ laser reflectometry Hong, SK; Kwon, Young Se, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.3, pp.854 - 861, 1997-04 |
Fabrication of InGaAsP/InP Twin-guide Laser Diode with Rectangular Ring Cavity Kwon, Young Se, ICSSDM, pp.604 - 605, 2001 |
Fabrication of integrated twin-guide corner reflector surface-emitting lasers with reactive ion-beam etching Kwon, Young Se, ISCS, ISCS, 1997-09 |
Fabrication of monolithic VCO using selective-area MOCVD. Kwon, Young Se, International Symposium on Compound Semiconductors, 1996 |
Fabrication of Novel Active Resistor Using Selective Metal Organic ChemicalVapor Deposition(MOCVD) for Monolithic Integration. young-jae lee; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.L89 - L90, 2001-02 |
Fabrication of novel self-aligned InP/InGaAs HBT''s using dummy emitter Kim, M; Jeon, S; Yoon, M; Yang, Kyounghoon; Kwon, Young Se, Conference on Optoelectronic and Microelectronic Materials and Devices, pp.123, Conference on Optoelectronic and Microelectronic Materials and Devices, 2000-12-06 |
Fabrication of Serpentine shaped Laser Diode Using Reactive Ion Beam Etching Kwon, Young Se; Hong, Songcheol; Choi, JH, International Symposium on Compound Semiconductors, pp.1013 - 1018, 1995 |
Fabrication of the Microlens-attached AlGaAs/GaAs LED Kwon, Young Se, International Conference on VLSI and CAD, 1993 |
Fabrication of the tile type transceiver module package for X-band phase array radar using selectively anodized aluminum substrate Chun J.-H.; Yeo S.-K.; Kwon, Young Se, 2007 1st Asian and Pacific Conference on Synthetic Aperture Radar, APSAR 2007, pp.136 - 138, 2007-11-05 |
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