Fabrication of InGaAs-AlGaAs-GaAs integrated twin-guide corner reflector lasers using in situ laser reflectometry

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We have fabricated integrated twin-guide (ITG) corner reflector (CR) InGaAs-AlGaAs-GaAs laser diodes for the wavelength of 980 nm. In ITG laser diode the coupling between active laver and output waveguide is very strong so that the operation of ITG laser diode is sensitive to variations in epitaxial growth structures and material parameters. We have investigated the dependencies of ITG-CR lasers on these parameters. In situ laser reflectometry system was used to control epitaxial thickness and etching depth, precisely. Optical dispersion parameters based on Afromowitz' formula was applied to in situ laser reflectometry.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1997-04
Language
English
Article Type
Article
Citation

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.3, pp.854 - 861

ISSN
1077-260X
URI
http://hdl.handle.net/10203/74322
Appears in Collection
EE-Journal Papers(저널논문)
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