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Showing results 29 to 36 of 36

29
Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Im, Mae-Soon; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783, 2008-07

30
Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.3, pp.601 - 607, 2010-03

31
Punchthrough Characteristics of CMOS Souble-Gate FinFET

Choi, Yang-Kyu; Ryu, Seong-Wan; Lee, Hyunjin, The 12th Korean Conference on Semiconductors (KCS), pp.97 - 98, 2005-02

32
Refinement of Unified Random Access Memory

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04

33
Sub-5nm All-Around Gate FinFET for Ultimate Scaling

Lee, Hyunjin; Yu, Lee-Eun; Ryu, Seong-Wan; Han, Jin-Woo; Jeon, Kanghoon; Jang, Dong-Yoon; Kim, Kuk-Hwan; et al, IEEE Symposium on VLSI Technology Digest of Technical Papaers, pp. 70-71, 2006-06-13

34
Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391, 2009-03

35
Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application

Ryu, Seong-Wan; Huang, Xing-Jiu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.91, no.6, pp.851 - 858, 2007-08

36
Wet chemical needlelike assemblies of single-walled carbon nanotubes on a silicon surface

Huang, Xing-Jiu; Ryu, Seong-Wan; Im, Hyung-Soon; Choi, Yang-Kyu, LANGMUIR, v.23, no.3, pp.991 - 994, 2007-01

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