Browse "College of Engineering(공과대학)" by Author Ryu, Seong-Wan
Showing results 16 to 36 of 36
| Gate-All-Around Silicon Nanowire MOSFETs on Bulk Substrate Choi, Yang-Kyu; Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sungho; Kim, Chung-Jin; Ahn, Jae-Hyuk; Choi, Sung-Jin; et al, The 16th Korean Conference on Semiconductors, pp.648 - 649, 2009-02 |
| Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM) Han, Jin-Woo; Ryu, Seong-Wan; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191, 2009-02 |
| Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate Lee, Jong-Won; Ryu, Seong-Wan; Shin, Dong Ok; Kim, Bong Hoon; Kim, Sang Ouk; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643, 2009-06 |
| Gold Nanocrystal-embedded Vertical Device for the 3-D Structural Nonvolatile Memory Applications Choi, Yang-Kyu; Ryu, Seong-Wan; Kim, Chung-Jin, The 14th Korean Conference on Semiconductors, pp.63 - 64, 2007-02 |
| Gold nanoparticle embedded silicon nanowire biosensor for applications of label-free DNA detection Ryu, Seong-Wan; Kim, Chang-Hoon; Han, Jin-Woo; Kim, Chung-Jin; Jung, Cheul-Hee; Park, Hyun-Gyu; Choi, Yang-Kyu, BIOSENSORS BIOELECTRONICS, v.25, no.9, pp.2182 - 2185, 2010-05 |
| Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Beom; Bang, Tewook; Son, Yoon-Ik; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.2, pp.419 - 423, 2018-02 |
| Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET Bae, Hagyoul; Bang, Tewook; Kim, Choong-Ki; Hur, Jae; Kim, Seyeob; Jeon, Chang-Hoon; Park, Jun-Young; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250, 2017-05 |
| Investigation of Isolation-Dielectric Effects of PDSOI FinFET on Capacitorless 1T-DRAM Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3232 - 3235, 2009-12 |
| Itinerant Helimagnetic Single-Crystalline MnSi Nanowires Seo, Kwan-Yong; Yoon, Ha-Na; Ryu, Seong-Wan; Lee, Sung-Hun; Jo, Young-Hun; Jung, Myung-Hwa; Kim, Jin-Hee; et al, ACS NANO, v.4, no.5, pp.2569 - 2576, 2010-05 |
| Metal nanocrystals synthesized with a micellar template based on a diblock copolymer for three-dimensional nonvolatile memory Kim, Chung-Jin; Ryu, Seong-Wan; Choi, Yang-Kyu; Chang, Jae-Joon; Bae, Su-Hak; Sohn, Byeong-Hyeok, APPLIED PHYSICS LETTERS, v.93, no.5, 2008-08 |
| Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface Gupta, Dipti; Anand, Manish; Ryu, Seong-Wan; Choi, Yang-Kyu; Yoo, Seunghyup, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12 |
| Nonvolatile memory characteristics of NMOSFET with Ag nanocrystals synthesized via a thermal decomposition process for uniform device distribution Ryu, Seong-Wan; Bin Mo, Chan; Hong, Soon Hyung; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.145 - 150, 2008-03 |
| Nonvolatile Memory Characteristics of NMOSFET with Silver Nanocrystals Synthesized by Thermal Decomposition Process Ryu, Seong-Wan; Chan Bin Mo; Hong, Soon-hyung; Choi, Yang-Kyu, Proceedings of IEEE Nanotechnology Materials and Devices Conference, IEEE Nanotechnology Council , National Center for Nanomaterials Technology, Korea, 2006-10-22 |
| Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Im, Mae-Soon; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783, 2008-07 |
| Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.3, pp.601 - 607, 2010-03 |
| Punchthrough Characteristics of CMOS Souble-Gate FinFET Choi, Yang-Kyu; Ryu, Seong-Wan; Lee, Hyunjin, The 12th Korean Conference on Semiconductors (KCS), pp.97 - 98, 2005-02 |
| Refinement of Unified Random Access Memory Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04 |
| Sub-5nm All-Around Gate FinFET for Ultimate Scaling Lee, Hyunjin; Yu, Lee-Eun; Ryu, Seong-Wan; Han, Jin-Woo; Jeon, Kanghoon; Jang, Dong-Yoon; Kim, Kuk-Hwan; et al, IEEE Symposium on VLSI Technology Digest of Technical Papaers, pp. 70-71, 2006-06-13 |
| Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391, 2009-03 |
| Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application Ryu, Seong-Wan; Huang, Xing-Jiu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.91, no.6, pp.851 - 858, 2007-08 |
| Wet chemical needlelike assemblies of single-walled carbon nanotubes on a silicon surface Huang, Xing-Jiu; Ryu, Seong-Wan; Im, Hyung-Soon; Choi, Yang-Kyu, LANGMUIR, v.23, no.3, pp.991 - 994, 2007-01 |
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