The Structural Properties of Epitaxial GaN Films Growth on LaAlO3(100) Substrates

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Publisher
한국물리학회
Issue Date
1999-12
Language
Korean
Citation

응용물리, v.12, no.3, pp.202 - 206

ISSN
1013-7009
URI
http://hdl.handle.net/10203/68996
Appears in Collection
MS-Journal Papers(저널논문)
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