The Structural Properties of Epitaxial GaN Films Growth on LaAlO3(100) Substrates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J.J. Lee | ko |
| dc.contributor.author | K.Y. Kang | ko |
| dc.contributor.author | Y.S. Park | ko |
| dc.contributor.author | C.S. Yang | ko |
| dc.contributor.author | H.S. Kim | ko |
| dc.contributor.author | K.H. Kim | ko |
| dc.contributor.author | T.W. Kang | ko |
| dc.contributor.author | S.H. Park | ko |
| dc.contributor.author | J.Y. Lee | ko |
| dc.date.accessioned | 2013-02-27T14:07:31Z | - |
| dc.date.available | 2013-02-27T14:07:31Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999-12 | - |
| dc.identifier.citation | 응용물리, v.12, no.3, pp.202 - 206 | - |
| dc.identifier.issn | 1013-7009 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/68996 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | The Structural Properties of Epitaxial GaN Films Growth on LaAlO3(100) Substrates | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 12 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 202 | - |
| dc.citation.endingpage | 206 | - |
| dc.citation.publicationname | 응용물리 | - |
| dc.contributor.localauthor | J.Y. Lee | - |
| dc.contributor.nonIdAuthor | J.J. Lee | - |
| dc.contributor.nonIdAuthor | K.Y. Kang | - |
| dc.contributor.nonIdAuthor | Y.S. Park | - |
| dc.contributor.nonIdAuthor | C.S. Yang | - |
| dc.contributor.nonIdAuthor | H.S. Kim | - |
| dc.contributor.nonIdAuthor | K.H. Kim | - |
| dc.contributor.nonIdAuthor | T.W. Kang | - |
| dc.contributor.nonIdAuthor | S.H. Park | - |
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