Effect of annealing on fatigue properties of Sb-doped lead zirconate titanate thin films deposited by DC reactive sputtering

Abstract

The effect of annealing an the ferroelectric properties of Pt-based thin film capacitors of Sb-doped lead zirconate titanate [Pt/Pb(Zr0.48Ti0.52)O-3/Pt/SiO2/Si] were investigated. Undoped Pb(Zr0.48Ti0.52)O-3 (PZT0) and Sb-doped Pb(Zr0.48Ti0.52)O-3 (PZST07) thin films were annealed in oxygen atmosphere at 650 degrees C for 30 min. The Sb cation in a PZT thin Nm before and after annealing was confirmed to be trivalent (Sb3+) by X-ray photoelectron spectroscopy (XPS). The grain sizes of undoped PZT(PZT0) and Sb-doped PZT (PZST07) thin films after annealing are seen to increase. These changes of grain size affect the fatigue properties of PZT thin films. Annealed Sb-doped PZT (PZST07) thin films show good fatigue behavior (fatigue free up to 10(11) switching cycles) and a larger P-r*- P-r(boolean AND) value (31 mu C/cm(2)) than SrBi2Ta2O9 (SBT) thin films.