DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-02-27T13:59:57Z | - |
dc.date.available | 2013-02-27T13:59:57Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.38, no.1A, pp.122 - 126 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/68965 | - |
dc.description.abstract | The effect of annealing an the ferroelectric properties of Pt-based thin film capacitors of Sb-doped lead zirconate titanate [Pt/Pb(Zr0.48Ti0.52)O-3/Pt/SiO2/Si] were investigated. Undoped Pb(Zr0.48Ti0.52)O-3 (PZT0) and Sb-doped Pb(Zr0.48Ti0.52)O-3 (PZST07) thin films were annealed in oxygen atmosphere at 650 degrees C for 30 min. The Sb cation in a PZT thin Nm before and after annealing was confirmed to be trivalent (Sb3+) by X-ray photoelectron spectroscopy (XPS). The grain sizes of undoped PZT(PZT0) and Sb-doped PZT (PZST07) thin films after annealing are seen to increase. These changes of grain size affect the fatigue properties of PZT thin films. Annealed Sb-doped PZT (PZST07) thin films show good fatigue behavior (fatigue free up to 10(11) switching cycles) and a larger P-r*- P-r(boolean AND) value (31 mu C/cm(2)) than SrBi2Ta2O9 (SBT) thin films. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | PB(ZR,TI)O-3 | - |
dc.subject | CAPACITORS | - |
dc.title | Effect of annealing on fatigue properties of Sb-doped lead zirconate titanate thin films deposited by DC reactive sputtering | - |
dc.type | Article | - |
dc.identifier.wosid | 000079477600027 | - |
dc.identifier.scopusid | 2-s2.0-0032629135 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 1A | - |
dc.citation.beginningpage | 122 | - |
dc.citation.endingpage | 126 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.identifier.doi | 10.1143/JJAP.38.122 | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | lead zirconate titanate | - |
dc.subject.keywordAuthor | PZT | - |
dc.subject.keywordAuthor | Sb-doped | - |
dc.subject.keywordAuthor | grain site | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | fatigue | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | PB(ZR,TI)O-3 | - |
dc.subject.keywordPlus | CAPACITORS | - |
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