The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

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Publisher
KLUWER ACADEMIC PUBL
Issue Date
2000-05
Language
English
Article Type
Article
Keywords

2-DIMENSIONAL ELECTRON-GAS; TRANSISTOR STRUCTURES; EDGE SINGULARITY; PHOTOLUMINESCENCE; ALGAAS/INGAAS/GAAS; MAGNETOTRANSPORT; HETEROSTRUCTURES; HETEROJUNCTIONS; SUBBAND; SPECTRA

Citation

JOURNAL OF MATERIALS SCIENCE LETTERS, v.19, no.9, pp.755 - 757

ISSN
0261-8028
URI
http://hdl.handle.net/10203/68086
Appears in Collection
MS-Journal Papers(저널논문)
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