DSpace at KOASAS: The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

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Kim, TW / Jung, M / Lee, DU / Kim, HJ / You, YS / Cho, JW / Yoo, KH / Lee, JeongYong researcher / Kim, MD

Publisher: KLUWER ACADEMIC PUBL

Issue Date: 2000-05

Language: English

Article Type: Article

Keywords: 2-DIMENSIONAL ELECTRON-GAS; TRANSISTOR STRUCTURES; EDGE SINGULARITY; PHOTOLUMINESCENCE; ALGAAS/INGAAS/GAAS; MAGNETOTRANSPORT; HETEROSTRUCTURES; HETEROJUNCTIONS; SUBBAND; SPECTRA

Citation: JOURNAL OF MATERIALS SCIENCE LETTERS, v.19, no.9, pp.755 - 757

ISSN: 0261-8028

URI: http://hdl.handle.net/10203/68086

Appears in Collection: MS-Journal Papers(저널논문)

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The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

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