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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

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dc.contributor.authorKim, TWko
dc.contributor.authorJung, Mko
dc.contributor.authorLee, DUko
dc.contributor.authorKim, HJko
dc.contributor.authorYou, YSko
dc.contributor.authorCho, JWko
dc.contributor.authorYoo, KHko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, MDko
dc.date.accessioned2013-02-27T10:53:13Z-
dc.date.available2013-02-27T10:53:13Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-05-
dc.identifier.citationJOURNAL OF MATERIALS SCIENCE LETTERS, v.19, no.9, pp.755 - 757-
dc.identifier.issn0261-8028-
dc.identifier.urihttp://hdl.handle.net/10203/68086-
dc.languageEnglish-
dc.publisherKLUWER ACADEMIC PUBL-
dc.subject2-DIMENSIONAL ELECTRON-GAS-
dc.subjectTRANSISTOR STRUCTURES-
dc.subjectEDGE SINGULARITY-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectALGAAS/INGAAS/GAAS-
dc.subjectMAGNETOTRANSPORT-
dc.subjectHETEROSTRUCTURES-
dc.subjectHETEROJUNCTIONS-
dc.subjectSUBBAND-
dc.subjectSPECTRA-
dc.titleThe dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells-
dc.typeArticle-
dc.identifier.wosid000086418000010-
dc.identifier.scopusid2-s2.0-0033743288-
dc.type.rimsART-
dc.citation.volume19-
dc.citation.issue9-
dc.citation.beginningpage755-
dc.citation.endingpage757-
dc.citation.publicationnameJOURNAL OF MATERIALS SCIENCE LETTERS-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorJung, M-
dc.contributor.nonIdAuthorLee, DU-
dc.contributor.nonIdAuthorKim, HJ-
dc.contributor.nonIdAuthorYou, YS-
dc.contributor.nonIdAuthorCho, JW-
dc.contributor.nonIdAuthorYoo, KH-
dc.contributor.nonIdAuthorKim, MD-
dc.type.journalArticleArticle-
dc.subject.keywordPlus2-DIMENSIONAL ELECTRON-GAS-
dc.subject.keywordPlusTRANSISTOR STRUCTURES-
dc.subject.keywordPlusEDGE SINGULARITY-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusALGAAS/INGAAS/GAAS-
dc.subject.keywordPlusMAGNETOTRANSPORT-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusHETEROJUNCTIONS-
dc.subject.keywordPlusSUBBAND-
dc.subject.keywordPlusSPECTRA-
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MS-Journal Papers(저널논문)
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