IMPROVED FREQUENCY RESPONSE OF InP/InGaAsP/InGaAs AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS
- Publisher
- Inst Engineering Technology-Iet
- Issue Date
- 1985-01
- Language
- English
- Article Type
- Article
- Citation
ELECTRONICS LETTERS, v.21, no.20, pp.886 - 887
- ISSN
- 0013-5194
- Appears in Collection
- RIMS Journal Papers
- Files in This Item
- There are no files associated with this item.
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