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IMPROVED FREQUENCY RESPONSE OF InP/InGaAsP/InGaAs AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS

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dc.contributor.authorHolden, W.S.ko
dc.contributor.authorCampbell, J.C.ko
dc.contributor.authorFergyson, J.F.ko
dc.contributor.authorDentai, A.G.ko
dc.contributor.authorJhee, Youn Kyuko
dc.date.accessioned2013-02-27T09:00:30Z-
dc.date.available2013-02-27T09:00:30Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1985-01-
dc.identifier.citationELECTRONICS LETTERS, v.21, no.20, pp.886 - 887-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/67638-
dc.languageEnglish-
dc.publisherInst Engineering Technology-Iet-
dc.titleIMPROVED FREQUENCY RESPONSE OF InP/InGaAsP/InGaAs AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS-
dc.typeArticle-
dc.identifier.wosidA1985ASA7100002-
dc.identifier.scopusid2-s2.0-0022129698-
dc.type.rimsART-
dc.citation.volume21-
dc.citation.issue20-
dc.citation.beginningpage886-
dc.citation.endingpage887-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:19850625-
dc.contributor.localauthorJhee, Youn Kyu-
dc.contributor.nonIdAuthorHolden, W.S.-
dc.contributor.nonIdAuthorCampbell, J.C.-
dc.contributor.nonIdAuthorFergyson, J.F.-
dc.contributor.nonIdAuthorDentai, A.G.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
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