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Showing results 1 to 4 of 4

1
1ST-PRINCIPLES STUDY OF THE ATOMIC-STRUCTURE AND LOCAL VIBRATIONAL-MODES OF THE DX CENTER IN GAAS UNDER PRESSURE

CHEONG, BH; Chang, Kee-Joo, PHYSICAL REVIEW B, v.46, no.20, pp.13131 - 13135, 1992-11

2
ATOMIC MODEL FOR HYDROGEN PASSIVATION OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS

Chang, Kee-Joo; CHEONG, BH; PARK, CH, SOLID STATE COMMUNICATIONS, v.84, no.11, pp.1005 - 1009, 1992-12

3
Increase in In0.32Ga0.68P band-gap energy due to the electron capturing of DX centers

N. Y. Lee; Park, Hae Yong; S. D. Kwon; H. K. Shin; H. Lim; Kim, Jae Eun, SOLID STATE COMMUNICATIONS, v.102, no.10, pp.763 - 767, 1997-06

4
STRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP

Chang, Kee-Joo; CHEONG, BH, MODERN PHYSICS LETTERS B, v.9, no.9, pp.511 - 530, 1995-04

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