Increase in In0.32Ga0.68P band-gap energy due to the electron capturing of DX centers

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Anomalous increase of band gap energy was observed in the temperature-dependent photoluminescence spectra of S-, Se- and Te-doped In0.32Ga0.68P. This blue shift could be explained by; the change of many body effect of the conduction electrons due to the electron capture at the DX centers. The ratio of the electron concentration captured at the DX centers to the free electron concentration could be determined empirically from the values of the observed band gap energy shift. The ratios were 0.40, 0.12 and 0.15 for S-, Se- and Te-doped In0.32Ga0.68P samples with dopant concentration of mild 10(17) cm(-3), respectively. (C) 1997 Elsevier Science Ltd.
Publisher
Pergamon-Elsevier Science Ltd
Issue Date
1997-06
Language
English
Article Type
Article
Keywords

PERSISTENT PHOTOCONDUCTIVITY; ALXGA1-XAS ALLOYS; CHEMICAL TRENDS; DOPED GAAS; PHOTOLUMINESCENCE; SEMICONDUCTORS; SI; MODEL

Citation

SOLID STATE COMMUNICATIONS, v.102, no.10, pp.763 - 767

ISSN
0038-1098
URI
http://hdl.handle.net/10203/23359
Appears in Collection
PH-Journal Papers(저널논문)
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