Browse "PH-Journal Papers(저널논문)" by Author Ryu, Byung-Ki
Showing results 1 to 7 of 7
| Ab initio study of boron segregation and deactivation at Si/SiO2 interface Oh, Young-Jun; Hwang, Jin-Heui; Noh, Hyeon-Kyun; Bang, Jun-Hyeok; Ryu, Byung-Ki; Chang, Kee-Joo, MICROELECTRONIC ENGINEERING, v.89, pp.120 - 123, 2012-01 |
| Defects responsible for the Fermi level pinning in n(+) poly-Si/HfO2 gate stacks Ryu, Byung-Ki; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.97, no.24, pp.242910, 2010-12 |
| Defects Responsible for the Hole Gas in Ge/Si Core-Shell Nanowires Park, Ji-Sang; Ryu, Byung-Ki; Moon, Chang-Youn; Chang, Kee-Joo, NANO LETTERS, v.10, pp.116 - 121, 2010-01 |
| Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Noh, Hyeon-Kyun; Chang, Kee-Joo; Ryu, Byung-Ki; Lee, Woo-Jin, PHYSICAL REVIEW B, v.84, no.11, pp.115205 - 115205, 2011-09 |
| O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors Ryu, Byung-Ki; Noh, Hyeon-Kyun; Choi, Eun-Ae; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.97, no.2, pp.022108 - 022108, 2010-07 |
| Stability of Donor-Pair Defects in Si1-xGex Alloy Nanowires Park, Ji-Sang; Ryu, Byung-Ki; Chang, Kee-Joo, JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.21, pp.10345 - 10350, 2011-06 |
| Structural and electronic properties of crystalline InGaO3 (ZnO)(m) Lee, Woo-Jin; Choi, Eun-Ae; Bang, Junhyeok; Ryu, Byung-Ki; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.93, no.11, pp.111901 - 111901, 2008-09 |
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