Defects responsible for the Fermi level pinning in n(+) poly-Si/HfO2 gate stacks

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Based on density functional calculations, we propose a defect model that can explain flat band voltage shifts, especially in n(+) poly-Si/HfO2 gate stacks. For two interface structures, with Si electrodes on top of crystalline and amorphous HfO2, we find the formation of O-vacancies at the interface, which exhibit weak Si-Si dimer bonds and low formation energies, very different from those in the oxide. Due to weak dimer bonds, charge trap levels lie near the Si conduction band edge, leading to the Fermi level pinning and flat band voltage shifts in n(+) poly-Si gate electrodes. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527929]
Publisher
AMER INST PHYSICS
Issue Date
2010-12
Language
English
Article Type
Article
Keywords

OXIDE INTERFACE; HFO2; PSEUDOPOTENTIALS; ENERGY

Citation

APPLIED PHYSICS LETTERS, v.97, no.24, pp.242910

ISSN
0003-6951
DOI
10.1063/1.3527929
URI
http://hdl.handle.net/10203/95205
Appears in Collection
PH-Journal Papers(저널논문)
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