Fabrication of Latch-Up-Free Self-Aligned Insulator Gate Bipolar Transistor(IGBT) with Silcide Contact Technology
- Publisher
- 대한전기학회
- Issue Date
- 1989-09
- Language
- Korean
- Citation
전기학회 논문지 P권, v.2, no.2, pp.127 - 131
- ISSN
- 1229-800x
- Appears in Collection
- Files in This Item
- There are no files associated with this item.
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