Fabrication of Latch-Up-Free Self-Aligned Insulator Gate Bipolar Transistor(IGBT) with Silcide Contact Technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Y.H.Koh | ko |
| dc.contributor.author | C.K.Kim | ko |
| dc.date.accessioned | 2013-02-25T11:25:07Z | - |
| dc.date.available | 2013-02-25T11:25:07Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989-09 | - |
| dc.identifier.citation | 전기학회 논문지 P권, v.2, no.2, pp.127 - 131 | - |
| dc.identifier.issn | 1229-800x | - |
| dc.identifier.uri | http://hdl.handle.net/10203/61828 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전기학회 | - |
| dc.title | Fabrication of Latch-Up-Free Self-Aligned Insulator Gate Bipolar Transistor(IGBT) with Silcide Contact Technology | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 2 | - |
| dc.citation.issue | 2 | - |
| dc.citation.beginningpage | 127 | - |
| dc.citation.endingpage | 131 | - |
| dc.citation.publicationname | 전기학회 논문지 P권 | - |
| dc.contributor.nonIdAuthor | Y.H.Koh | - |
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