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Showing results 1 to 9 of 9

1
Chemically amplified resists based on norbornene polymer with non- outgassing acid labile protecting group

Lee, Jae Jun; Lee, Kwan-Ku; Kim, Jin-Baek, 한국고분자학회 2000년도 추계 학술대회 , v.25, no.2, pp.300 - 300, 한국고분자학회, 2000-10

2
Chemically amplified resists based on the norbornene polymer with 2-trimethylsilyl-2-propyl ester protecting group

Kim, Jin-Baek; Lee, Jae Jun; Kang, Jae-Sung, Advances in Resist Technology and Processing XVII, pp.1079 - 1087, SPIE, 2000-02-28

3
Chemically amplified silicon-containing cycloaliphatic photoresists: their synthesis and application to 193-nm lithography

Kim, Jin-Baek; Lee, Jae Jun; Lee, Kwan Gu, 한국고분자학회 2000년 춘계학술대회, v.25, no.1, pp.135 - 135, 한국고분자학회, 2000-04

4
Effects of florine for photoresists properties

Kim, Young Woo; Kwon, Young-Gil; Lee, Jae Jun; Kim, Jin-Baek, 한국고분자학회 2002년 추계학술대회, pp.254 - 254, 한국고분자학회, 2002-10

5
Non-Shrinkable Photoresist for Arf Lithography

Kim, Jin-Baek; Oh, Tae-Hwan; Choi, Jae-Hak; Lee, Jae Jun, 한국고분자학회 2003년도 춘계학술대회, pp.0 - 0, 한국고분자학회, 2003-04

6
Non-Shrinkable Photoresist for Arf Lithography

Kim, Jin-Baek; Oh, Tae-Hwan; Choi, Jae-Hak; Lee, Jae Jun, Advances in Resist Technology and Processing XIXI, pp.689 - 697, 2003-02-24

7
Novel alicyclic polymers having 7,7-dimethyloxepan-2-one acid labile groups for ArF lithography

Lee, Jae Jun; Kim, Jin-Baek; Honda, Kenji, Advances in Resist Technology and Processing XIX, pp.110 - 119, SPIE, 2002-03-04

8
Poly(3-allyl-7,7-dimethyl-oxepan-2-one-co-maleic anhydride) for a 193-nm photoresist

Lee, Jae Jun; Lee, Kwan Gu; Kim, Jin-Baek, 한국고분자학회 2001년 춘계학술대회, pp.155 - 155, 한국고분자학회, 2001-04

9
Synthesis and Evaluation of a Novel Alicyclic Polymer Having 7,7-Dimethyloxepan-2-one Acid Labile Group for 193-nm Photoresists

Lee, Jae Jun; Kim, Jin-Baek, 한국고분자학회 2001년도 추계학술대회, pp.35 - 35, 한국고분자학회, 2001-10

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