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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy Cho, HK; Lee, JeongYong; Leem, JY, APPLIED SURFACE SCIENCE, v.221, pp.288 - 292, 2004-01 | |
Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.1348 - 1352, 2001-10 | |
Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1166 - 1170, 2002-02 |
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