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Results 1-4 of 4 (Search time: 0.008 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells

Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07

2
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

Cho, HK; Lee, JeongYong; Leem, JY, APPLIED SURFACE SCIENCE, v.221, pp.288 - 292, 2004-01

3
Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.1348 - 1352, 2001-10

4
Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12

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