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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07 | |
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy Cho, HK; Lee, JeongYong; Leem, JY, APPLIED SURFACE SCIENCE, v.221, pp.288 - 292, 2004-01 | |
Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.1348 - 1352, 2001-10 | |
Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12 |
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