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Results 31-40 of 80 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
31
Dependence of the AlSb 3-dimensional buffer on GaSb/GaAs (100) heterostructures

Lee, Jeong Yong, The 14th International Conference on Molecular Beam Epitaxy, 2006-09-03

32
Growth mechanism and structural properties of self-assembled AlSb quantum dots on Si (100) substrate

Lee, Jeong Yong, The 14th International Conference on Molecular Beam Epitaxy, 2006-09-03

33
The Structure Properties of GaSb layers Grown on InAs, AlSb, and GaSb buffer layers on GaAs (100) Substrates

Lee, Jeong Yong, The 13th International Symposium on the Physics of Semiconductors and Applications, 2006-08-22

34
Characteristics of InGaN/GaN light-emitting -diodes with Si-doped GaN contact layer

Lee, Jeong Yong, 4th International Conference on Nitride Semiconductors, pp.0 - 0, 2001-07-01

35
Structural properites of GaN grown by pendeo-epitaxy with In-doping

Lee, Jeong Yong, 4th International Conference on Nitride Semiconductors, pp.2 - 9, 2001-07-01

36
TEM study on The Crystallization and Phase transition Behavior of Annealed Ge-Bi-Te and Ge-Sn-Te Chalcogenide Thin Films for Phase Change Memory Material

Lee, Jeong Yong, 2008 Materials Research Society Spring Meeting, 2008-04-24

37
A Transmission Electron Micoscopy Study on the Crystallization of Sb-Se-Te Thin Films Deposited by RF-Sputtering Method

Lee, Jeong Yong, The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08-26

38
Microstructural Analysis of Sb-Se-Te Thin Films Crystallization by Using in Situ High Voltage Electron Microscopy

Lee, Jeong Yong, The 9th Asia-Pacific Microscopy Conference, 2008-11-02

39
Microstructure Analysis of In-Sb-Te Thin Films Deposited by RF Magnetron Sputtering

Lee, Jeong Yong, The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08-26

40
Growth processes and atomic sequences of GaN nanrods grown on Si (111) substrates

Lee, Jeong Yong, The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08-26

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