The Structure Properties of GaSb layers Grown on InAs, AlSb, and GaSb buffer layers on GaAs (100) Substrates
- Issue Date
- 2006-08-22
- Language
- ENG
- Citation
The 13th International Symposium on the Physics of Semiconductors and Applications
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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