Growth and Structure of Chemical Vapor Deposited Silicon Carbide from Methyltrichlorosilane and Hydrogen in the Temperature Range of 1100 to 1400oC
- Publisher
- American Institute of Physics
- Issue Date
- 1988-01
- Language
- English
- Article Type
- Article
- Citation
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, v.6, no.1, pp.5 - 8
- ISSN
- 0734-2101
- Appears in Collection
- RIMS Journal Papers
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 55 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.