Growth and Structure of Chemical Vapor Deposited Silicon Carbide from Methyltrichlorosilane and Hydrogen in the Temperature Range of 1100 to 1400oC
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chun , Soung Soon | ko |
| dc.date.accessioned | 2013-02-25T05:38:59Z | - |
| dc.date.available | 2013-02-25T05:38:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988-01 | - |
| dc.identifier.citation | JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, v.6, no.1, pp.5 - 8 | - |
| dc.identifier.issn | 0734-2101 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/60307 | - |
| dc.language | English | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Growth and Structure of Chemical Vapor Deposited Silicon Carbide from Methyltrichlorosilane and Hydrogen in the Temperature Range of 1100 to 1400oC | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1988L686600002 | - |
| dc.identifier.scopusid | 2-s2.0-84902973993 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 6 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 5 | - |
| dc.citation.endingpage | 8 | - |
| dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A | - |
| dc.contributor.localauthor | Chun , Soung Soon | - |
| dc.type.journalArticle | Article | - |
- Appears in Collection
- RIMS Journal Papers
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 55 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.