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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

Effect of interface state distribution on field effect conductance activation energy in hydrogenated amorphous silicon thin film transistors

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B-S. Bae
Publisher
Amer Inst Physics
Issue Date
1990
Article Type
Article
Citation

JOURNAL OF APPLIED PHYSICS, v.68, no.7, pp.3439 - 3442

ISSN
0021-8979
URI
http://hdl.handle.net/10203/57215
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