Effect of interface state distribution on field effect conductance activation energy in hydrogenated amorphous silicon thin film transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | B-S. Bae | ko |
| dc.date.accessioned | 2013-02-24T12:42:00Z | - |
| dc.date.available | 2013-02-24T12:42:00Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.68, no.7, pp.3439 - 3442 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57215 | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Effect of interface state distribution on field effect conductance activation energy in hydrogenated amorphous silicon thin film transistors | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1990ED73600058 | - |
| dc.identifier.scopusid | 2-s2.0-36549104979 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 68 | - |
| dc.citation.issue | 7 | - |
| dc.citation.beginningpage | 3439 | - |
| dc.citation.endingpage | 3442 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.type.journalArticle | Article | - |
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