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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

The Effect of A Parasitic Potential Barrier on the Neutral Base Recombination Current of Si/SiGe/Si DHBTs

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Sang-Won Kangresearcher / Sung-Ihl Kim / Byung R.Ryum / Wonchan Kim
Publisher
Pergamon-Elsevier Science Ltd
Issue Date
1994-01
Language
English
Article Type
Note
Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; MODEL; HBTS; SI1-XGEX

Citation

SOLID-STATE ELECTRONICS, v.37, no.3, pp.517 - 519

ISSN
0038-1101
DOI
10.1016/0038-1101(94)90020-5
URI
http://hdl.handle.net/10203/56070
Appears in Collection
MS-Journal Papers(저널논문)
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