The Effect of A Parasitic Potential Barrier on the Neutral Base Recombination Current of Si/SiGe/Si DHBTs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sang-Won Kang | ko |
| dc.contributor.author | Sung-Ihl Kim | ko |
| dc.contributor.author | Byung R.Ryum | ko |
| dc.contributor.author | Wonchan Kim | ko |
| dc.date.accessioned | 2013-02-24T09:27:24Z | - |
| dc.date.available | 2013-02-24T09:27:24Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-01 | - |
| dc.identifier.citation | SOLID-STATE ELECTRONICS, v.37, no.3, pp.517 - 519 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/56070 | - |
| dc.language | English | - |
| dc.publisher | Pergamon-Elsevier Science Ltd | - |
| dc.subject | HETEROJUNCTION BIPOLAR-TRANSISTORS | - |
| dc.subject | MODEL | - |
| dc.subject | HBTS | - |
| dc.subject | SI1-XGEX | - |
| dc.title | The Effect of A Parasitic Potential Barrier on the Neutral Base Recombination Current of Si/SiGe/Si DHBTs | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1994MW78800019 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 37 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 517 | - |
| dc.citation.endingpage | 519 | - |
| dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
| dc.identifier.doi | 10.1016/0038-1101(94)90020-5 | - |
| dc.contributor.localauthor | Sang-Won Kang | - |
| dc.contributor.nonIdAuthor | Sung-Ihl Kim | - |
| dc.contributor.nonIdAuthor | Byung R.Ryum | - |
| dc.contributor.nonIdAuthor | Wonchan Kim | - |
| dc.type.journalArticle | Note | - |
| dc.subject.keywordPlus | HETEROJUNCTION BIPOLAR-TRANSISTORS | - |
| dc.subject.keywordPlus | MODEL | - |
| dc.subject.keywordPlus | HBTS | - |
| dc.subject.keywordPlus | SI1-XGEX | - |
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