NEGATIVE DIFFERENTIAL RESISTANCE OF GAAS/ALXGA1-XAS MULTIQUANTUM WELL STRUCTURES UNDER HIGH-POWER PHOTOEXCITATION - STRUCTURE OPTIMIZATION FOR AN OSCILLATOR
A study is presented of the photocurrent behaviour of pin diodes having GaAs/AlxGa1-xAs MQW absorption regions for varying incident power, incident wavelength and barrier height, given by the Al fraction x. Optimum results for applications in high power oscillators are expected to be obtained for 0.1 < x < 0.2. The performance characteristics of optically controlled oscillators are estimated for a diode with MQW having Al0.15Ga0.85As barriers.
- Publisher
- IEE-INST ELEC ENG
- Issue Date
- 1992-05
- Language
- English
- Article Type
- Article
- Keywords
QUANTUM; MODULATION; DEVICE
- Citation
ELECTRONICS LETTERS, v.28, no.10, pp.915 - 916
- ISSN
- 0013-5194
- Appears in Collection
- EE-Journal Papers(저널논문)
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