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Showing results 1 to 6 of 6

1
Angle-resolved photoemission of InSb(111)-2x2

Kim, JW; Kim, Sehun; Seo, JM; Tanaka, S; Kamada, M, JOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.23, pp.4189 - 4193, 1996-06

2
Metal-dependent Fermi-level movement in the metal/sulfur-passivated InGaP contact

Kim, YK; Kim, Sehun; Seo, JM; Ahn, S; Kim, KJ; Kang, TH; Kim, B, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.15, no.3, pp.1124 - 1128, 1997

3
Photoemission studies of the Na/Ge(111)-3x1 surface

Kim, JW; Kim, Sehun; Seo, JM; Tanaka, S; Kamada, M, JOURNAL OF PHYSICS-CONDENSED MATTER, v.10, no.17, pp.3731 - 3741, 1998-05

4
Reduction of gap states of ternary III-V semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

Seo, JM; Kim, YK; Lee, HG; Chung, YS; Kim, Sehun, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.14, no.3, pp.941 - 945, 1996

5
Surface core-level shift of InSb(111)-2x2

Kim, JW; Kim, Sehun; Seo, JM; Tanaka, S; Kamada, M, PHYSICAL REVIEW B, v.54, no.7, pp.4476 - 4479, 1996-08

6
Surface electronic properties of Na/Ge(111)-3x1

Kim, JW; Seo, JM; Kim, Sehun, SURFACE SCIENCE, v.351, no.1-3, pp.239 - 244, 1996-05

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