Angle-resolved photoemission of InSb(111)-2x2

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The electronic band structure of InSb(111) along the Gamma-Lambda-L[111] direction was determined using angle-resolved photoemission spectroscopy for the photon energy between 9 and 39 eV via synchrotron radiation. The bulk band dispersion is in agreement with earlier theoretical calculations. The In- (group III-) terminated InSb(111) surface shows surface Umklapp transitions and reflection of the bulk density of states. We found two nondispersive features which were not reported before. They are related to the surface state and the resonance process of the InSb(111)-2 x 2.
Publisher
IOP PUBLISHING LTD
Issue Date
1996-06
Language
English
Article Type
Article
Keywords

PHOTOELECTRON-SPECTROSCOPY; SEMICONDUCTOR SURFACES; ELECTRONIC-STRUCTURE; BAND-STRUCTURE; GAAS(111); MODEL; GAAS; INSB

Citation

JOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.23, pp.4189 - 4193

ISSN
0953-8984
URI
http://hdl.handle.net/10203/11357
Appears in Collection
CH-Journal Papers(저널논문)
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