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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Angle-resolved photoemission of InSb(111)-2x2

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dc.contributor.authorKim, JWko
dc.contributor.authorKim, Sehunko
dc.contributor.authorSeo, JMko
dc.contributor.authorTanaka, Sko
dc.contributor.authorKamada, Mko
dc.date.accessioned2009-09-21T05:01:20Z-
dc.date.available2009-09-21T05:01:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-06-
dc.identifier.citationJOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.23, pp.4189 - 4193-
dc.identifier.issn0953-8984-
dc.identifier.urihttp://hdl.handle.net/10203/11357-
dc.description.abstractThe electronic band structure of InSb(111) along the Gamma-Lambda-L[111] direction was determined using angle-resolved photoemission spectroscopy for the photon energy between 9 and 39 eV via synchrotron radiation. The bulk band dispersion is in agreement with earlier theoretical calculations. The In- (group III-) terminated InSb(111) surface shows surface Umklapp transitions and reflection of the bulk density of states. We found two nondispersive features which were not reported before. They are related to the surface state and the resonance process of the InSb(111)-2 x 2.-
dc.description.sponsorshipFinancial support was partially provided by the Centre for Molecular Science and the Pohang Light Source. One of us (J M Seo) was supported by the Basic Science Research Institute Programme, Ministry of Education, 1994, Project No BSRI-94-2433.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIOP PUBLISHING LTD-
dc.subjectPHOTOELECTRON-SPECTROSCOPY-
dc.subjectSEMICONDUCTOR SURFACES-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectBAND-STRUCTURE-
dc.subjectGAAS(111)-
dc.subjectMODEL-
dc.subjectGAAS-
dc.subjectINSB-
dc.titleAngle-resolved photoemission of InSb(111)-2x2-
dc.typeArticle-
dc.identifier.wosidA1996UP44600011-
dc.identifier.scopusid2-s2.0-0030567604-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue23-
dc.citation.beginningpage4189-
dc.citation.endingpage4193-
dc.citation.publicationnameJOURNAL OF PHYSICS-CONDENSED MATTER-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorKim, JW-
dc.contributor.nonIdAuthorSeo, JM-
dc.contributor.nonIdAuthorTanaka, S-
dc.contributor.nonIdAuthorKamada, M-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPHOTOELECTRON-SPECTROSCOPY-
dc.subject.keywordPlusSEMICONDUCTOR SURFACES-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusBAND-STRUCTURE-
dc.subject.keywordPlusGAAS(111)-
dc.subject.keywordPlusMODEL-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusINSB-
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