Showing results 1 to 4 of 4
Effect of outermost layers on resonant cavity enhanced devices Chung, IS; Lee, YT; Kim, Jae Eun; Park, Hae Yong, JOURNAL OF APPLIED PHYSICS, v.96, no.5, pp.2423 - 2427, 2004-09 |
FABRICATION OF INGAAS/INP AVALANCHE PHOTODIODES BY REACTIVE ION ETCHING USING CH4/H-2 GASES PARK, CY; YOO, JB; PARK, C; HYUN, KS; OH, DK; Lee, Yong-Hee; LEE, C; et al, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.13, no.3, pp.974 - 977, 1995 |
Switching of Photonic Crystal Lasers by Graphene Hwang, Min-Soo; Kim, Ha-Reem; Kim, Kyoung-Ho; Jeong, Kwang-Yong; Park, Jin-Sung; Choi, Jae-Hyuck; Kang, Ju-Hyung; et al, NANO LETTERS, v.17, no.3, pp.1892 - 1898, 2017-03 |
Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates Ki, Bugeun; Kim, Kyung Ho; Kim, Hyungjun; Lee, Chulwon; Cho, Yong-Hoon; Oh, Jungwoo, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.5239 - 5242, 2016-05 |
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