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Increase in In0.32Ga0.68P band-gap energy due to the electron capturing of DX centers N. Y. Lee; Park, Hae Yong; S. D. Kwon; H. K. Shin; H. Lim; Kim, Jae Eun, SOLID STATE COMMUNICATIONS, v.102, no.10, pp.763 - 767, 1997-06 |
STRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP Chang, Kee-Joo; CHEONG, BH, MODERN PHYSICS LETTERS B, v.9, no.9, pp.511 - 530, 1995-04 |
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