극자외선 리소그래피 하부 무반사층용 fluorinated silicon nitride 박막의 제조 및 특성분석Fabrication and characterization of fluorinated silicon nitride thin film for the bottom antireflective layer in deep ultraviolet lithography

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dc.contributor.advisor노광수-
dc.contributor.advisorNo, Kwang-Soo-
dc.contributor.author전병혁-
dc.contributor.authorJun, Byung-Hyuk-
dc.date.accessioned2011-12-15T01:03:43Z-
dc.date.available2011-12-15T01:03:43Z-
dc.date.issued1998-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=143466&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/50225-
dc.description학위논문(박사) - 한국과학기술원 : 재료공학과, 1998.8, [ xv, 158 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subjectERD-TOF 조성-
dc.subject무반사층 디자인 시뮬레이터-
dc.subject플로리네이티드 실리콘 나이트라이드 박막-
dc.subject하부 무반사층-
dc.subject극자외선 리소그래피-
dc.subject산화기구-
dc.subjectOxidation mechanism-
dc.subjectERD-TOF composition-
dc.subjectBARL design simulator-
dc.subjectFluorianted silicon nitride thin film-
dc.subjectBottom antireflective layer (BARL)-
dc.subjectDUV lithography-
dc.title극자외선 리소그래피 하부 무반사층용 fluorinated silicon nitride 박막의 제조 및 특성분석-
dc.title.alternativeFabrication and characterization of fluorinated silicon nitride thin film for the bottom antireflective layer in deep ultraviolet lithography-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN143466/325007-
dc.description.department한국과학기술원 : 재료공학과, -
dc.identifier.uid000955335-
dc.contributor.localauthor전병혁-
dc.contributor.localauthorJun, Byung-Hyuk-
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MS-Theses_Ph.D.(박사논문)
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