DSpace at KOASAS: ECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O

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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Theses_Ph.D.(박사논문)

ECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O_3$ 박막의 제조 및 특성 평가 연구Fabrication and characterization of ECR PECVD (Pb,La)(Zr,Ti)$O_3$ thin films for the charge storage capacitors of ULSI DRAM

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신중식 / Shin, Joong-Shik

Advisors: 이원종 researcher; 천성순 researcher; Lee, Won-Jong researcher; Chun, Soung-Soon researcher

Description: 한국과학기술원 : 재료공학과,

Publisher: 한국과학기술원

Issue Date: 1997

Identifier: 128165/325007 / 000935197

Language: kor

Description: 학위논문(박사) - 한국과학기술원 : 재료공학과, 1997.8, [ iv, 159 p. ]

Keywords: 화학증착드; 휘발성 불규칙 접근 메모리; 케페시터; PLZT; Electron cyclotron resonance plasma; Chemical vapor deposition; Dynamic random access memory; Capacitor; 피엘지티; 자기공명 플라즈마

URI: http://hdl.handle.net/10203/50185

Link: http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=128165&flag=dissertation

Appears in Collection: MS-Theses_Ph.D.(박사논문)

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ECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O_3$ 박막의 제조 및 특성 평가 연구Fabrication and characterization of ECR PECVD (Pb,La)(Zr,Ti)$O_3$ thin films for the charge storage capacitors of ULSI DRAM

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