ECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O_3$ 박막의 제조 및 특성 평가 연구Fabrication and characterization of ECR PECVD (Pb,La)(Zr,Ti)$O_3$ thin films for the charge storage capacitors of ULSI DRAM
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 이원종 | - |
| dc.contributor.advisor | 천성순 | - |
| dc.contributor.advisor | Lee, Won-Jong | - |
| dc.contributor.advisor | Chun, Soung-Soon | - |
| dc.contributor.author | 신중식 | - |
| dc.contributor.author | Shin, Joong-Shik | - |
| dc.date.accessioned | 2011-12-15T01:03:03Z | - |
| dc.date.available | 2011-12-15T01:03:03Z | - |
| dc.date.issued | 1997 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=128165&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/50185 | - |
| dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 1997.8, [ iv, 159 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | 화학증착드 | - |
| dc.subject | 휘발성 불규칙 접근 메모리 | - |
| dc.subject | 케페시터 | - |
| dc.subject | PLZT | - |
| dc.subject | Electron cyclotron resonance plasma | - |
| dc.subject | Chemical vapor deposition | - |
| dc.subject | Dynamic random access memory | - |
| dc.subject | Capacitor | - |
| dc.subject | 피엘지티 | - |
| dc.subject | 자기공명 플라즈마 | - |
| dc.title | ECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O_3$ 박막의 제조 및 특성 평가 연구 | - |
| dc.title.alternative | Fabrication and characterization of ECR PECVD (Pb,La)(Zr,Ti)$O_3$ thin films for the charge storage capacitors of ULSI DRAM | - |
| dc.type | Thesis(Ph.D) | - |
| dc.identifier.CNRN | 128165/325007 | - |
| dc.description.department | 한국과학기술원 : 재료공학과, | - |
| dc.identifier.uid | 000935197 | - |
| dc.contributor.localauthor | 신중식 | - |
| dc.contributor.localauthor | Shin, Joong-Shik | - |
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