DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Jin-Baek | - |
dc.contributor.advisor | 김진백 | - |
dc.contributor.author | Kim, Hyun-Woo | - |
dc.contributor.author | 김현우 | - |
dc.date.accessioned | 2011-12-15 | - |
dc.date.available | 2011-12-15 | - |
dc.date.issued | 1999 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=151332&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/49766 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 신소재공학과, 1999.2, [ xiii, 110 p. 삽도 ; ] | - |
dc.description.abstract | Poly(2-trimethylsilyl-2-propyl methacrylate) was synthesized and evaluated as a potential dry-developable chemically amplified photoresist. The deprotection mechanism of new protecting group, 2-trimethylsilyl-2-propyl ester, was evaluated. Deprotection of poly(2-trimethylsilyl-2-propyl methacrylate) was studied for various photogenerated acids. Deprotection of 2-trimethylsilyl-2-propyl (TMSP) ester did not occur in a catalytic manner when the photogenerated acid possessing a fluoride ion source such as $SbF_6^-$ or $AsF_6^-$ was used. Because the cleaved product, α-methyl-α-(trimethylsilyl)ethyl cation, undergoes rearrangement through methyl migration from silicon to carbon with nucleophilic attack on the silicon by the fluoride ion, the acid was consumed in the reaction. Fortunately, when the counterion of the acid does not provide a fluoride ion, e.g., sulfonate, the carbonium ion undergoes elimination to produce 2,2,3-trimethyl-2-silabut-3-ene, and regenerates another acid. The thermal stability of TMSP ester was very good up to 200℃ and similar to t-butyl ester, and acid catalyzed cleavage of the TMSP began at 80℃. The deprotection of 2-trimethylsilyl-2-propyl group of the polymer took place in the exposed region after post-exposure bake. The difference of silicon content between the unexposed region and exposed regions was large enough to form patterns using oxygen reactive-ion etching. γ-Butyrolactone-2-yl methacrylate was introduced to increase adhesion property and glass transition temperature of the matrix polymer. Poly(2-trimethylsilyl-2-propyl methacrylate-co-γ-butyrolactone-2-yl methacrylate) was evaluated as a resist for ArF excimer laser lithography. Sub-micron pattern profiles were obtained using dry development process with $O_2$-RIE as well as conventional development process with 2.38 wt% TMAH solution. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 아르곤플루오라이드 | - |
dc.subject | 보호기 | - |
dc.subject | 건식현상 | - |
dc.subject | Silicon containing polymer | - |
dc.subject | Protecting group | - |
dc.subject | ArF | - |
dc.subject | Dry-developable | - |
dc.subject | 실리콘함유 고분자 | - |
dc.title | Synthesis of acrylate polymers with acid labile organosilicon protecting groups and their application as dry-developable photoresists for ArF lithography | - |
dc.title.alternative | 산촉매에 의해 분해되는 유기 실리콘기를 측쇄에 함유하는 아크릴레이트계 공중합체의 합성과 아르곤 플루오라이드 리소그라피용 건식현상형 포토레지스트로서의 응용 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 151332/325007 | - |
dc.description.department | 한국과학기술원 : 신소재공학과, | - |
dc.identifier.uid | 000959502 | - |
dc.contributor.localauthor | Kim, Hyun-Woo | - |
dc.contributor.localauthor | 김현우 | - |
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