| 1 | Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs Choi, Wonchul; Shin, Mincheol, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, pp.5861 - 5864, 2011-07 |
| 2 | Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
| 3 | Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108, 2010-08 |
| 4 | p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01 |
| 5 | Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors Jung, Hyo Eun; Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.118, no.19, pp.195703-1 - 195703-7, 2015-11 |
| 6 | Wigner transport simulation of (core gate) silicon-shell nanowire transistors in cylindrical coordinates Lee, Joon-Ho; Jeong, Woo Jin; Seo, Junbeom; Shin, Mincheol, SOLID-STATE ELECTRONICS, v.139, pp.101 - 108, 2018-01 |
| 7 | A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction Lee, Jaehyun; Kim, Seungchul; Shin, Mincheol, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06 |
