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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core Yun, Byeonghun; Park, Dae-Woong; Choi, Won-Jong; Mahmood, Hafiz Usman; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.3, pp.292 - 295, 2021-03 |
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