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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.523 - 528, 2021-02 | |
| Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfxZr1-xO2 Capacitors Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.331 - 334, 2021-03 | |
| Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04 | |
| Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays Goh, Youngin; Hwang, Junghyeon; Kim, Minki; Lee, Yongsun; Jung, Minhyun; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.59422 - 59430, 2021-12 |
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